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NTE454 Технические параметры
NTE Electronics, Inc NTE454 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-72-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-72 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 60mA | |
| Power Dissipation (Max) | 1.2W | |
| Manufacturer Part Number | NTE454 | |
| Manufacturer | NTE Electronics | |
| Package Description | CYLINDRICAL, O-MBCY-W4 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.12 | |
| Drain Current-Max (ID) | 0.06 A | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -65°C ~ 175°C (TJ) | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Case Connection | SOURCE | |
| FET Type | N-Channel | |
| Transistor Application | AMPLIFIER | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 15 V | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-72 | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| FET Feature | Standard | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Power Gain-Min (Gp) | 15 dB |
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