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NTE457 Технические параметры
NTE Electronics, Inc NTE457 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Surface Mount | NO | |
| Supplier Device Package | TO-92 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Operating Temperature (Max.) | 125C | |
| Operating Temperature Classification | Military | |
| Package Type | TO-92 | |
| Gate-Source Voltage (Max) | 25(V) | |
| Rad Hardened | No | |
| Operating Temperature (Min.) | -65C | |
| Mounting | Through Hole | |
| Package Description | CYLINDRICAL, O-PBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NTE457 | |
| Package Shape | ROUND | |
| Manufacturer | NTE Electronics Inc | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 1.58 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part Package Code | TO-92 | |
| Series | - | |
| Operating Temperature | 125°C (TJ) | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Other Transistors | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power - Max | 310 mW | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-92 | |
| DS Breakdown Voltage-Min | 25 V | |
| Channel Type | N | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.31 W | |
| Feedback Cap-Max (Crss) | 3 pF | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 15 V | |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 10 nA | |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
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