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NTE490 Технические параметры
NTE Electronics, Inc. NTE490 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | Axial | |
| Surface Mount | NO | |
| Supplier Device Package | Axial | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | NTE490 | |
| Manufacturer | NTE Electronics | |
| Package | Bag | |
| Current - Continuous Drain (Id) @ 25℃ | 500mA (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | NTE Electronics, Inc | |
| Power Dissipation (Max) | 350mW (Ta) | |
| Product Status | Active | |
| Package Description | CYLINDRICAL, O-PBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 5.71 | |
| Drain Current-Max (ID) | 0.5 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | FET General Purpose Power | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | O-PBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 10 V | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 0.5 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.83 W | |
| FET Feature | - |
Индекс :
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