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NTE55 Технические параметры
NTE Electronics, Inc NTE55 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-220 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 8A | |
| Manufacturer Part Number | NTE55 | |
| Manufacturer | NTE Electronics | |
| Emitter-Base Voltage | 5(V) | |
| Operating Temperature Classification | Military | |
| Package Type | TO-220 | |
| Transistor Polarity | PNP | |
| Collector-Base Voltage | 150(V) | |
| Category | Bipolar Power | |
| Operating Temp Range | -65C to 150C | |
| Collector Current (DC) | 8(A) | |
| Number of Elements | 1 Element | |
| Rad Hardened | No | |
| Mounting | Through Hole | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 30 MHz | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 2.1 | |
| Part Package Code | SFM | |
| Series | - | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | Other Transistors | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Frequency | 30(MHz) | |
| Pin Count | 3 +Tab | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Power Dissipation | 2(W) | |
| Case Connection | COLLECTOR | |
| Output Power | Not Required(W) | |
| Power - Max | 2W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A, 2V | |
| JEDEC-95 Code | TO-220AB | |
| Gain | - | |
| Voltage - Collector Emitter Breakdown (Max) | 150V | |
| Frequency - Transition | 30MHz | |
| Power Dissipation-Max (Abs) | 50 W | |
| Collector Current-Max (IC) | 8 A | |
| DC Current Gain-Min (hFE) | 40 | |
| Collector-Emitter Voltage-Max | 150 V | |
| Noise Figure (dB Typ @ f) | - | |
| Power Dissipation Ambient-Max | 50 W |
Индекс :
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