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NTE55MCP Технические параметры

NTE Electronics, Inc  NTE55MCP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Current-Collector (Ic) (Max) 8A
Manufacturer Part Number NTE55MCP
Свойство продукта Значение свойства
Manufacturer NTE Electronics
Series -
Operating Temperature -65°C ~ 150°C (TJ)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A, 2V
Gain -
Voltage - Collector Emitter Breakdown (Max) 150V
Frequency - Transition 30MHz
Noise Figure (dB Typ @ f) -
Просмотр сходства
NTE55MCP brand manufacturers: NTE Electronics, Inc, Anli stock, NTE55MCP reference price.NTE Electronics, Inc. NTE55MCP parameters, NTE55MCP Datasheet PDF and pin diagram description download.You can use the NTE55MCP Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NTE55MCP pin diagram and circuit diagram and usage method of function,NTE55MCP electronics tutorials.You can download from the Anli.