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NTE6363 Технические параметры

NTE Electronics, Inc  NTE6363 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Stud Mount
Package / Case DO-203AA, DO-9, Stud
Surface Mount NO
Supplier Device Package DO-9
Diode Element Material SILICON
Number of Terminals 1Terminal
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Manufacturer Part Number NTE6363
Manufacturer NTE Electronics
Package Description O-MUPM-H1
Package Style POST/STUD MOUNT
Package Body Material METAL
Risk Rank 5.71
Forward Voltage-Max (VF) 1.4 V
Ihs Manufacturer NTE ELECTRONICS INC
Part Life Cycle Code Active
Number of Elements 1 Element
Package Shape ROUND
Rohs Code Yes
Operating Temperature-Max 200 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Series -
ECCN Code EAR99
Applications POWER
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position UPPER
Terminal Form HIGH CURRENT CABLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code O-MUPM-H1
Qualification Status Not Qualified
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 30 mA @ 1400 V
Case Connection ANODE
Operating Temperature - Junction -40°C ~ 180°C
Output Current-Max 300 A
Voltage - DC Reverse (Vr) (Max) 1400 V
Current - Average Rectified (Io) 300A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 1400 V
Capacitance @ Vr, F -
Non-rep Pk Forward Current-Max 6850 A
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