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NTE6400 Технические параметры
NTE Electronics, Inc NTE6400 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Programmable Unijunction | |
| Марка | ||
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Power Dissipation (Max) | 300 mW | |
| RoHS | Compliant | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NTE6400 | |
| Package Shape | ROUND | |
| Manufacturer | NTE Electronics Inc | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.14 | |
| Series | - | |
| Max Operating Temperature | 175 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -65 °C | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Unijunction Transistors | |
| Max Power Dissipation | 600 mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Voltage | - | |
| Voltage - Output | - | |
| Transistor Application | SWITCHING | |
| JEDEC-95 Code | TO-39 | |
| Power Dissipation-Max (Abs) | 0.45 W | |
| Current - Peak | 25 μA | |
| Current - Valley (Iv) | 8 mA | |
| Inter-base Voltage-Max | 35 V | |
| Intrinsic Stand-off Ratio-Max | 0.8 | |
| Intrinsic Stand-off Ratio-Min | 0.45 | |
| Static Inter-base Res-Max | 12 kΩ | |
| Static Inter-base Res-Min | 4 kΩ | |
| Valley Point Current-Min | 8 mA | |
| Emitter Current-Max | 50 mA | |
| Peak Point Current-Max | 25 mA |
Индекс :
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