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NTE65 Технические параметры

NTE Electronics, Inc  NTE65 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Supplier Device Package 3-SMD
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Current-Collector (Ic) (Max) 30mA
Manufacturer Part Number NTE65
Свойство продукта Значение свойства
Manufacturer NTE Electronics
Series -
Operating Temperature -
Power - Max 180mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 14mA, 10V
Gain 18dB
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Просмотр сходства
NTE65 brand manufacturers: NTE Electronics, Inc, Anli stock, NTE65 reference price.NTE Electronics, Inc. NTE65 parameters, NTE65 Datasheet PDF and pin diagram description download.You can use the NTE65 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find NTE65 pin diagram and circuit diagram and usage method of function,NTE65 electronics tutorials.You can download from the Anli.