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BCM857BV315 Технические параметры

NXP  BCM857BV315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка NXP
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Package Bulk
Current-Collector (Ic) (Max) 100mA
Mfr NXP USA Inc.
Product Status Active
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Series -
Power - Max 300mW
Transistor Type 2 PNP (Dual) Matched Pair
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Frequency - Transition 175MHz
Просмотр сходства
BCM857BV315 brand manufacturers: NXP, Anli stock, BCM857BV315 reference price.NXP. BCM857BV315 parameters, BCM857BV315 Datasheet PDF and pin diagram description download.You can use the BCM857BV315 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find BCM857BV315 pin diagram and circuit diagram and usage method of function,BCM857BV315 electronics tutorials.You can download from the Anli.