Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
NXP BLF4G20-110B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Fixed Inductors | |
| Марка | NXP | |
| Package / Case | Axial | |
| Surface Mount | YES | |
| Supplier Device Package | -- | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BLF4G20-110B | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.83 | |
| Drain Current-Max (ID) | 12 A | |
| Operating Temperature | -55°C ~ 155°C | |
| Series | MRS16 | |
| Packaging | Tape & Box (TB) | |
| Size / Dimension | 0.063 Dia x 0.142 L (1.60mm x 3.60mm) | |
| Tolerance | ±1% | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | ±50ppm/°C | |
| Resistance | 5.6 Ohms | |
| Composition | Metal Film | |
| Power (Watts) | 0.4W | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Failure Rate | -- | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 12 A | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Features | -- | |
| Height Seated (Max) | -- |