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BLF6G22LS-180RN Технические параметры
NXP BLF6G22LS-180RN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | NXP | |
| Mounting Type | Surface Mount, MLCC | |
| Package / Case | 1206 (3216 Metric) | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Mfr | Vishay Vitramon | |
| Product Status | Obsolete | |
| Voltage Rated | 200V | |
| Package Description | FLATPACK, R-CDFP-F2 | |
| Package Style | FLATPACK | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 225 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BLF6G22LS-180RN | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.8 | |
| Drain Current-Max (ID) | 49 A | |
| Operating Temperature | -55°C ~ 150°C | |
| Series | GA | |
| Size / Dimension | 0.126 L x 0.063 W (3.20mm x 1.60mm) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tolerance | ±0.5pF | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | C0G, NP0 | |
| Applications | Automotive | |
| Capacitance | 1.8 pF | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFP-F2 | |
| Qualification Status | Not Qualified | |
| Failure Rate | - | |
| Lead Spacing | - | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Lead Style | - | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| Features | - | |
| Height Seated (Max) | - | |
| Thickness (Max) | 0.067 (1.70mm) | |
| Ratings | AEC-Q200 |
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