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- BLS6G2735LS-30，112
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BLS6G2735LS-30，112 Технические параметры
NXP BLS6G2735LS-30，112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | NXP | |
| Factory Lead Time | 26 Weeks | |
| Mount | Screw | |
| Surface Mount | YES | |
| Number of Pins | 2Pins | |
| Material | Aluminum | |
| Shape | Square, Fins | |
| Package Cooled | Assorted (BGA, LGA, CPU, ASIC...) | |
| Material Finish | Blue Anodized | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Voltage, Rating | 60 V | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Package Description | FLATPACK, S-CDFP-F2 | |
| Package Style | FLATPACK | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BLS6G2735LS-30,112 | |
| Package Shape | SQUARE | |
| Manufacturer | Ampleon | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Risk Rank | 5.35 | |
| Series | pushPIN™ | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | Top Mount | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Current Rating | 45 A | |
| Frequency | 3.5 GHz | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | S-CDFP-F2 | |
| Configuration | SINGLE | |
| Attachment Method | Push Pin | |
| Height Off Base (Height of Fin) | 0.394 (10.00mm) | |
| Thermal Resistance @ Forced Air Flow | 13.07°C/W @ 100 LFM | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Output Power | 30 W | |
| Transistor Application | AMPLIFIER | |
| Test Current | 50 mA | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 8.2 A | |
| Gate to Source Voltage (Vgs) | 13 V | |
| Gain | 13 dB | |
| Max Frequency | 3.5 GHz | |
| Drain to Source Breakdown Voltage | 60 V | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 580 mΩ | |
| Thermal Resistance @ Natural | -- | |
| Highest Frequency Band | S BAND | |
| Test Voltage | 32 V | |
| Min Breakdown Voltage | 60 V | |
| Power Dissipation @ Temperature Rise | -- | |
| Width | 1.575 (40.00mm) | |
| Length | 1.575 (40.00mm) | |
| Diameter | -- | |
| Lead Free | Lead Free |
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