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PBSS4230PANP,115 Технические параметры

NXP  PBSS4230PANP,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка NXP
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2)
Package Bulk
Current-Collector (Ic) (Max) 2A
Mfr NXP USA Inc.
Product Status Active
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Series -
Power - Max 510mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 120MHz
PBSS4230PANP,115 brand manufacturers: NXP, Anli stock, PBSS4230PANP,115 reference price.NXP. PBSS4230PANP,115 parameters, PBSS4230PANP,115 Datasheet PDF and pin diagram description download.You can use the PBSS4230PANP,115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find PBSS4230PANP,115 pin diagram and circuit diagram and usage method of function,PBSS4230PANP,115 electronics tutorials.You can download from the Anli.