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PDTA113EMB315 Технические параметры

NXP  PDTA113EMB315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package DFN1006B-3
Package Bulk
Current-Collector (Ic) (Max) 100 mA
Mfr NXP USA Inc.
Product Status Active
Series -
Свойство продукта Значение свойства
Power - Max 250 mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 40mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 150mV @ 1.5mA, 30mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 180 MHz
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
Просмотр сходства
PDTA113EMB315 brand manufacturers: NXP, Anli stock, PDTA113EMB315 reference price.NXP. PDTA113EMB315 parameters, PDTA113EMB315 Datasheet PDF and pin diagram description download.You can use the PDTA113EMB315 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTA113EMB315 pin diagram and circuit diagram and usage method of function,PDTA113EMB315 electronics tutorials.You can download from the Anli.