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PDTA113EU115 Технические параметры

NXP  PDTA113EU115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Package Bulk
Current-Collector (Ic) (Max) 100 mA
Mfr NXP USA Inc.
Product Status Active
Свойство продукта Значение свойства
Series -
Power - Max 200 mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 40mA, 5V
Current - Collector Cutoff (Max) 1µA
Vce Saturation (Max) @ Ib, Ic 150mV @ 1.5mA, 30mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
PDTA113EU115 brand manufacturers: NXP, Anli stock, PDTA113EU115 reference price.NXP. PDTA113EU115 parameters, PDTA113EU115 Datasheet PDF and pin diagram description download.You can use the PDTA113EU115 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTA113EU115 pin diagram and circuit diagram and usage method of function,PDTA113EU115 electronics tutorials.You can download from the Anli.