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PDTA114EMB，315 Технические параметры

NXP  PDTA114EMB，315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package DFN1006B-3
Package Bulk
Current-Collector (Ic) (Max) 100 mA
Mfr NXP Semiconductors
Product Status Active
Base Product Number PDTA114
Свойство продукта Значение свойства
Series -
Power - Max 250 mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Current - Collector Cutoff (Max) 1µA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 180 MHz
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
Просмотр сходства
PDTA114EMB，315 brand manufacturers: NXP, Anli stock, PDTA114EMB，315 reference price.NXP. PDTA114EMB，315 parameters, PDTA114EMB，315 Datasheet PDF and pin diagram description download.You can use the PDTA114EMB，315 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTA114EMB，315 pin diagram and circuit diagram and usage method of function,PDTA114EMB，315 electronics tutorials.You can download from the Anli.