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PDTA143TMB315 Технические параметры

NXP  PDTA143TMB315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Chassis Mount
Package / Case Radial, 3 Lead, Tubular
Supplier Device Package DFN1006B-3
Package Box
Mfr Vishay Sfernice
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Series RSSD
Tolerance ±10%
Termination Solder Lug
Resistance 1.5 Ohms
Свойство продукта Значение свойства
Power (Watts) 600 W
Power - Max 250 mW
Adjustment Type Slide
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
Current - Collector Cutoff (Max) 1µA
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 180 MHz
Resistor - Base (R1) 4.7 kOhms
Length 14.685 (373.00mm)
Diameter 2.087 OD, 1.067 ID (53.00mm x 27.10mm)
Просмотр сходства
PDTA143TMB315 brand manufacturers: NXP, Anli stock, PDTA143TMB315 reference price.NXP. PDTA143TMB315 parameters, PDTA143TMB315 Datasheet PDF and pin diagram description download.You can use the PDTA143TMB315 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTA143TMB315 pin diagram and circuit diagram and usage method of function,PDTA143TMB315 electronics tutorials.You can download from the Anli.