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PDTB114EUF Технические параметры

NXP  PDTB114EUF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package SOT-323
Package Tape & Reel (TR)
Mfr CTS-Frequency Controls
Product Status Active
Current-Collector (Ic) (Max) 500 mA
Operating Temperature -40°C ~ 85°C
Series 520
Size / Dimension 0.098 L x 0.079 W (2.50mm x 2.00mm)
Type TCXO
Voltage - Supply 3V
Frequency 14.4 MHz
Frequency Stability ±1.5ppm
Output Clipped Sine Wave
Свойство продукта Значение свойства
Function -
Base Resonator Crystal
Current - Supply (Max) 2mA
Current - Supply (Disable) (Max) -
Spread Spectrum Bandwidth -
Power - Max 300 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 140 MHz
Absolute Pull Range (APR) -
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
Height Seated (Max) 0.039 (1.00mm)
Ratings -
PDTB114EUF brand manufacturers: NXP, Anli stock, PDTB114EUF reference price.NXP. PDTB114EUF parameters, PDTB114EUF Datasheet PDF and pin diagram description download.You can use the PDTB114EUF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTB114EUF pin diagram and circuit diagram and usage method of function,PDTB114EUF electronics tutorials.You can download from the Anli.