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NXP PDTB114EUF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | NXP | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SMD, No Lead | |
| Supplier Device Package | SOT-323 | |
| Package | Tape & Reel (TR) | |
| Mfr | CTS-Frequency Controls | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 500 mA | |
| Operating Temperature | -40°C ~ 85°C | |
| Series | 520 | |
| Size / Dimension | 0.098 L x 0.079 W (2.50mm x 2.00mm) | |
| Type | TCXO | |
| Voltage - Supply | 3V | |
| Frequency | 14.4 MHz | |
| Frequency Stability | ±1.5ppm | |
| Output | Clipped Sine Wave |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Function | - | |
| Base Resonator | Crystal | |
| Current - Supply (Max) | 2mA | |
| Current - Supply (Disable) (Max) | - | |
| Spread Spectrum Bandwidth | - | |
| Power - Max | 300 mW | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 140 MHz | |
| Absolute Pull Range (APR) | - | |
| Resistor - Base (R1) | 10 kOhms | |
| Resistor - Emitter Base (R2) | 10 kOhms | |
| Height Seated (Max) | 0.039 (1.00mm) | |
| Ratings | - |