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PDTD113EUF Технические параметры

NXP  PDTD113EUF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Package Bulk
Current-Collector (Ic) (Max) 500 mA
Mfr NXP USA Inc.
Product Status Active
Series -
Свойство продукта Значение свойства
Power - Max 300 mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 225 MHz
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
Просмотр сходства
PDTD113EUF brand manufacturers: NXP, Anli stock, PDTD113EUF reference price.NXP. PDTD113EUF parameters, PDTD113EUF Datasheet PDF and pin diagram description download.You can use the PDTD113EUF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTD113EUF pin diagram and circuit diagram and usage method of function,PDTD113EUF electronics tutorials.You can download from the Anli.