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PDTD123ET,215 Технические параметры

NXP  PDTD123ET,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка NXP
Mounting Type Through Hole
Package / Case Module
Package Bulk
Voltage-Output 1 15V
Mfr ABB Power Electronics Inc.
Product Status Obsolete
Operating Temperature -25°C ~ 71°C
Series LAW005 (5W)
Size / Dimension 1.25 L x 0.80 W x 0.42 H (31.8mm x 20.3mm x 10.7mm)
Type Isolated Module
Свойство продукта Значение свойства
Applications ITE (Commercial)
Power (Watts) 5 W
Number of Outputs 2Outputs
Efficiency 80%
Voltage - Isolation 1.5 kV
Voltage - Input (Max) 75V
Voltage - Input (Min) 36V
Current - Output (Max) 190mA, 190mA
Voltage - Output 2 -15V
Voltage - Output 3 -
Features OCP
PDTD123ET,215 brand manufacturers: NXP, Anli stock, PDTD123ET,215 reference price.NXP. PDTD123ET,215 parameters, PDTD123ET,215 Datasheet PDF and pin diagram description download.You can use the PDTD123ET,215 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTD123ET,215 pin diagram and circuit diagram and usage method of function,PDTD123ET,215 electronics tutorials.You can download from the Anli.