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PEMD10，115 Технические параметры

NXP  PEMD10，115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка NXP
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Package Bulk
Current-Collector (Ic) (Max) 100mA
Mfr NXP USA Inc.
Product Status Active
Series -
Свойство продукта Значение свойства
Power - Max 300mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector Cutoff (Max) 1µA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition -
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
Просмотр сходства
PEMD10，115 brand manufacturers: NXP, Anli stock, PEMD10，115 reference price.NXP. PEMD10，115 parameters, PEMD10，115 Datasheet PDF and pin diagram description download.You can use the PEMD10，115 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find PEMD10，115 pin diagram and circuit diagram and usage method of function,PEMD10，115 electronics tutorials.You can download from the Anli.