Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
NXP PESD5V0S2BT,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | TVS - Diodes | |
| Марка | NXP | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Number of Pins | 3Pins | |
| Weight | 4.535924 g | |
| Breakdown Voltage / V | 9.5 V | |
| Reverse Stand-off Voltage | 5 V | |
| Number of Elements | 2 Elements | |
| RoHS | Compliant | |
| Package | Bulk | |
| Base Product Number | PESD5 | |
| Mfr | NXP USA Inc. | |
| Product Status | Active | |
| Series | * | |
| Termination | SMD/SMT | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Composition | Zener | |
| Capacitance | 45 pF | |
| Depth | 1.4 mm | |
| Operating Supply Voltage | 5 V | |
| Working Voltage | 5 V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | Bidirectional | |
| Number of Channels | 2Channels | |
| Leakage Current | 100 nA | |
| Element Configuration | Dual | |
| Power Line Protection | No | |
| Max Reverse Leakage Current | 100 nA | |
| Clamping Voltage | 14 V | |
| Peak Pulse Current | 12 A | |
| Max Surge Current | 12 A | |
| Peak Pulse Power | 130 W | |
| Direction | Bidirectional | |
| Test Current | 1 mA | |
| Reverse Breakdown Voltage | 5.5 V | |
| Max Breakdown Voltage | 9.5 V | |
| ESD Protection | Yes | |
| Number of Bidirectional Channels | 2Bidirectional Channels | |
| Min Breakdown Voltage | 5.5 V | |
| Width | 1.4 mm | |
| Height | 1 mm | |
| Length | 3 mm | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |