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PUMX2115 Технические параметры

NXP  PUMX2115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка NXP
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Package Bulk
Current-Collector (Ic) (Max) 150mA
Mfr NXP USA Inc.
Product Status Active
Свойство продукта Значение свойства
Operating Temperature 150°C (TJ)
Series -
Power - Max 300mW
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 100MHz
PUMX2115 brand manufacturers: NXP, Anli stock, PUMX2115 reference price.NXP. PUMX2115 parameters, PUMX2115 Datasheet PDF and pin diagram description download.You can use the PUMX2115 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find PUMX2115 pin diagram and circuit diagram and usage method of function,PUMX2115 electronics tutorials.You can download from the Anli.