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BAS32L,115 Технические параметры

NXP Semiconductors  BAS32L,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Supplier Device Package LLDS; MiniMelf
PCB changed 2
Peak Reverse Repetitive Voltage (V) 100
Maximum DC Reverse Voltage (V) 75
HTS 8541.10.00.80
ECCN (US) EAR99
Package Length 3.7(Max)
Mounting Surface Mount
Military No
Supplier Package Mini-MELF
AEC Qualified No
Maximum Operating Temperature (°C) 200
Minimum Operating Temperature (°C) -65
Peak Reverse Recovery Time (ns) 4
Maximum Power Dissipation (mW) 500
Peak Reverse Current (uA) 5
Peak Forward Voltage (V) [email protected]
Peak Non-Repetitive Surge Current (A) 4
Свойство продукта Значение свойства
Maximum Continuous Forward Current (A) 0.2
Package Bulk
Mfr NXP Semiconductors
Product Status Active
Packaging Tape and Reel
Series -
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA
Operating Temperature - Junction 200°C (Max)
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 200mA
Capacitance @ Vr, F 2pF @ 0V, 1MHz
Reverse Recovery Time (trr) 4 ns
Diameter 1.6(Max)
RoHS Status Yes with exemptions

BAS32L,115 Документы

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