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BAS45AL,115 Технические параметры

NXP Semiconductors  BAS45AL,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 125
Peak Reverse Repetitive Voltage (V) 125
Maximum Continuous Forward Current (A) 0.25
Peak Non-Repetitive Surge Current (A) 4
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.001
Maximum Power Dissipation (mW) 400
Peak Reverse Recovery Time (ns) 1500(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Package Mini-MELF
Military No
Свойство продукта Значение свойства
Mounting Surface Mount
Package Length 3.7(Max)
PCB changed 2
Package Bulk
Base Product Number BAS45
Mfr NXP USA Inc.
Product Status Active
Packaging Tape and Reel
Series *
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 1.6(Max)
RoHS Status Yes with exemptions
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BAS45AL,115 Документы

BAS45AL,115 brand manufacturers: NXP Semiconductors, Anli stock, BAS45AL,115 reference price.NXP Semiconductors. BAS45AL,115 parameters, BAS45AL,115 Datasheet PDF and pin diagram description download.You can use the BAS45AL,115 Diodes - RF, DSP Datesheet PDF, find BAS45AL,115 pin diagram and circuit diagram and usage method of function,BAS45AL,115 electronics tutorials.You can download from the Anli.