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BAS85,115 Технические параметры

NXP Semiconductors  BAS85,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Contact Plating Tin
Mount Surface Mount
Number of Pins 2Pins
Weight 4.535924 g
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 30
Maximum Continuous Forward Current (A) 0.2
Peak Non-Repetitive Surge Current (A) 5
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 2.3@25V
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 125
Automotive No
Supplier Package Mini-MELF
Military No
Mounting Surface Mount
Package Length 3.7(Max)
PCB changed 2
RoHS Compliant
Packaging Tape and Reel
Part Status Active
Termination SMD/SMT
Type Schottky Diode
Свойство продукта Значение свойства
Max Operating Temperature 125 °C
Min Operating Temperature -65 °C
Pin Count 2
Configuration Single
Voltage 30 V
Element Configuration Single
Current 2 A
Forward Current 200 mA
Max Reverse Leakage Current 2.3 µA
Max Surge Current 5 A
Forward Voltage 800 mV
Max Reverse Voltage (DC) 30 V
Average Rectified Current 200 mA
Peak Reverse Current 2.3 µA
Max Repetitive Reverse Voltage (Vrrm) 30 V
Peak Non-Repetitive Surge Current 5 A
Max Forward Surge Current (Ifsm) 5 A
Diameter 1.6(Max)
Width 1.6 mm
Height 1.6 mm
Length 3.7 mm
RoHS Status Yes with exemptions
REACH SVHC No SVHC
Radiation Hardening No
Lead Free Lead Free

BAS85,115 Документы

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