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BAV102,115 Технические параметры

NXP Semiconductors  BAV102,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Supplier Device Package LLDS; MiniMelf
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 150
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 0.25
Peak Non-Repetitive Surge Current (A) 9
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.1
Maximum Power Dissipation (mW) 400
Peak Reverse Recovery Time (ns) 50
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Package Mini-MELF
Military No
Mounting Surface Mount
Package Length 3.7(Max)
Свойство продукта Значение свойства
PCB changed 2
Package Bulk
Mfr NXP Semiconductors
Product Status Active
Packaging Tape and Reel
Series -
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Operating Temperature - Junction 175°C (Max)
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) 250mA
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Reverse Recovery Time (trr) 50 ns
Diameter 1.6(Max)
RoHS Status Yes with exemptions

BAV102,115 Документы

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