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BAV70215 Технические параметры

NXP Semiconductors  BAV70215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 100
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 0.215
Peak Non-Repetitive Surge Current (A) 4
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.5@80V
Maximum Junction Ambient Thermal Resistance 500K/W
Maximum Diode Capacitance (pF) 1.5
Maximum Power Dissipation (mW) 250
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Yes
AEC Qualified Number AEC-Q101
Standard Package Name SOT
Supplier Package SOT-23
Military No
Свойство продукта Значение свойства
Mounting Surface Mount
Package Height 1(Max)
Package Length 3(Max)
Package Width 1.4(Max)
PCB changed 3
Lead Shape Gull-wing
Package Bulk
Mfr NXP USA Inc.
Product Status Active
Current - Average Rectified (Io) (per Diode) 215mA (DC)
Packaging Tape and Reel
Series -
Part Status Active
Type Switching Diode
Pin Count 3
Configuration Dual Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Operating Temperature - Junction 150°C (Max)
Voltage - DC Reverse (Vr) (Max) 100 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 4 ns
RoHS Status RoHS Compliant

BAV70215 Документы

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