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BC856W,115 Технические параметры

NXP Semiconductors  BC856W,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
Supplier Device Package SOT-323
Product Status Active
Package Bulk
Mfr NXP Semiconductors
Current-Collector (Ic) (Max) 100 mA
Свойство продукта Значение свойства
Series Automotive, AEC-Q101
Operating Temperature 150°C (TJ)
Power - Max 200 mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Frequency - Transition 100MHz
Просмотр сходства
BC856W,115 brand manufacturers: NXP Semiconductors, Anli stock, BC856W,115 reference price.NXP Semiconductors. BC856W,115 parameters, BC856W,115 Datasheet PDF and pin diagram description download.You can use the BC856W,115 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC856W,115 pin diagram and circuit diagram and usage method of function,BC856W,115 electronics tutorials.You can download from the Anli.