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BLF1046,135 Технические параметры

NXP Semiconductors  BLF1046,135 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 5
Maximum VSWR 10
Maximum Continuous Drain Current (A) 4.5
Maximum Gate Source Leakage Current (nA) 125
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 300(Typ)@14V
Typical Input Capacitance @ Vds (pF) 46@26V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.5@26V
Typical Output Capacitance @ Vds (pF) 37@26V
Typical Forward Transconductance (S) 2
Output Power (W) 45
Свойство продукта Значение свойства
Typical Power Gain (dB) 14(Min)
Maximum Frequency (MHz) 1000
Minimum Frequency (MHz) 1
Typical Drain Efficiency (%) 46(Min)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package LDMOST
Military No
Mounting Screw
Package Height 4.67(Max)
Package Length 20.45(Max)
Package Width 5.97(Max)
PCB changed 3
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation CW Class-AB|2-Tone Class-AB|1-Tone Class-AB
RoHS Status Supplier Unconfirmed
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BLF1046,135 Документы

BLF1046,135 brand manufacturers: NXP Semiconductors, Anli stock, BLF1046,135 reference price.NXP Semiconductors. BLF1046,135 parameters, BLF1046,135 Datasheet PDF and pin diagram description download.You can use the BLF1046,135 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLF1046,135 pin diagram and circuit diagram and usage method of function,BLF1046,135 electronics tutorials.You can download from the Anli.