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BLF248,112 Технические параметры

NXP Semiconductors  BLF248,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Mount Screw
Surface Mount YES
Number of Pins 5Pins
Number of Terminals 4Terminals
Transistor Element Material SILICON
Channel Mode Enhancement
ECCN (US) EAR99
Maximum Drain Source Resistance (mOhm) 150@10V
Maximum Continuous Drain Current (A) 25
Maximum VSWR 50
Maximum Gate Source Voltage (V) ±20
Maximum Drain Source Voltage (V) 65
Number of Elements per Chip 2Elements per Chips
Package Height 5.77(Max)
Mounting Screw
Military No
Supplier Package CDFM
Maximum Operating Temperature (°C) 150
Minimum Operating Temperature (°C) -65
Typical Drain Efficiency (%) 67
Minimum Frequency (MHz) 10
Maximum Frequency (MHz) 225
Typical Power Gain (dB) 13
Output Power (W) 300
Maximum Power Dissipation (mW) 500000
Typical Output Capacitance @ Vds (pF) 360@28V
Typical Reverse Transfer Capacitance @ Vds (pF) 46@28V
Typical Input Capacitance @ Vds (pF) 500@28V
Package Width 10.29(Max)
Package Length 34.17(Max)
PCB changed 5
Voltage, Rating 65 V
Number of Elements 2 Elements
RoHS Compliant
Package Description FLANGE MOUNT, R-CDFM-F4
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Manufacturer Package Code SOT262A1
Reflow Temperature-Max (s) NOT SPECIFIED
Manufacturer Part Number BLF248,112
Package Shape RECTANGULAR
Manufacturer NXP Semiconductors
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Risk Rank 5.75
Part Package Code DFM
Drain Current-Max (ID) 25 A
Packaging Bulk
Part Status Obsolete
Свойство продукта Значение свойства
ECCN Code EAR99
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Max Power Dissipation 500 W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 25 A
Frequency 225 MHz
Pin Count 5
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Configuration Dual Common Source
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 500 W
Case Connection SOURCE
Output Power 300 W
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65 V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 25 A
Gate to Source Voltage (Vgs) 20 V
Gain 10 dB
Max Frequency 225 MHz
Max Output Power 300 W
Drain Current-Max (Abs) (ID) 25 A
Drain-source On Resistance-Max 0.15 Ω
Drain to Source Breakdown Voltage 65 V
Input Capacitance 500 pF
DS Breakdown Voltage-Min 65 V
Channel Type N
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 500 W
Drain to Source Resistance 150 mΩ
Highest Frequency Band VERY HIGH FREQUENCY BAND
Mode of Operation Class AB
Test Voltage 28 V
Min Breakdown Voltage 65 V
Power Dissipation Ambient-Max 500 W
Power Gain-Min (Gp) 10 dB
Width 10.29 mm
Height 5.77 mm
Length 34.17 mm
RoHS Status Supplier Unconfirmed
Lead Free Lead Free
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BLF248,112 Документы

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