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BLF647P Технические параметры

NXP Semiconductors  BLF647P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2Elements per Chips
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 2.4
Maximum VSWR 10
Maximum Gate Source Leakage Current (nA) 50
Maximum IDSS (uA) 1.4
Maximum Drain Source Resistance (mOhm) 140(Typ)@6.15V
Typical Input Capacitance @ Vds (pF) 78@32V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.3@32V
Typical Output Capacitance @ Vds (pF) 30@32V
Output Power (W) 200
Typical Power Gain (dB) 18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|18|19
Свойство продукта Значение свойства
Maximum Frequency (MHz) 1500
Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 70
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package CDFM
Military No
Mounting Screw
Package Height 4.75(Max)
Package Length 34.16(Max)
Package Width 9.91(Max)
PCB changed 5
Part Status Active
Pin Count 5
Configuration Dual Common Source
Channel Type N
Mode of Operation Class-AB|2-Tone Class-AB|Pulsed RF|CW Class-B
RoHS Status RoHS Compliant

BLF647P Документы

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