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BLF6G10-135RN,112 Технические параметры

NXP Semiconductors  BLF6G10-135RN,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum VSWR 10
Maximum Continuous Drain Current (A) 32
Maximum Drain Source Resistance (mOhm) 100(Typ)@6.15V
Typical Reverse Transfer Capacitance @ Vds (pF) 2@28V
Typical Forward Transconductance (S) 13
Output Power (W) 26.5(Typ)
Typical Power Gain (dB) 21
Maximum Frequency (MHz) 894
Minimum Frequency (MHz) 869
Typical Drain Efficiency (%) 28
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225
Supplier Package SOT-502A
Military No
Свойство продукта Значение свойства
Mounting Screw
Package Height 4.72(Max)
Package Length 34.16(Max)
Package Width 9.91(Max)
PCB changed 3
Manufacturer Package Code SOT502A
Rohs Code Yes
Manufacturer Part Number BLF6G10-135RN,112
Manufacturer NXP Semiconductors
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Risk Rank 5.84
Part Package Code SOT
Packaging Bulk
Part Status Obsolete
Reach Compliance Code unknown
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation 2-Carrier W-CDMA
RoHS Status RoHS Compliant
BLF6G10-135RN,112 brand manufacturers: NXP Semiconductors, Anli stock, BLF6G10-135RN,112 reference price.NXP Semiconductors. BLF6G10-135RN,112 parameters, BLF6G10-135RN,112 Datasheet PDF and pin diagram description download.You can use the BLF6G10-135RN,112 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLF6G10-135RN,112 pin diagram and circuit diagram and usage method of function,BLF6G10-135RN,112 electronics tutorials.You can download from the Anli.