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BLF6G38-10,112 Технические параметры

NXP Semiconductors  BLF6G38-10,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum VSWR 10
Maximum Continuous Drain Current (A) 3.1
Maximum Drain Source Resistance (mOhm) [email protected]
Typical Reverse Transfer Capacitance @ Vds (pF) 3.6@28V
Typical Forward Transconductance (S) 0.8(Min)
Output Power (W) 2(Typ)
Typical Power Gain (dB) 14
Maximum Frequency (MHz) 3600
Minimum Frequency (MHz) 3400
Свойство продукта Значение свойства
Typical Drain Efficiency (%) 20
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package CDFM
Military No
Mounting Surface Mount
Package Height 3.63(Max)
Package Length 6.93(Max)
Package Width 6.93(Max)
PCB changed 3
Packaging Bulk
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation 1-Carrier N-CDMA
RoHS Status RoHS Compliant
BLF6G38-10,112 brand manufacturers: NXP Semiconductors, Anli stock, BLF6G38-10,112 reference price.NXP Semiconductors. BLF6G38-10,112 parameters, BLF6G38-10,112 Datasheet PDF and pin diagram description download.You can use the BLF6G38-10,112 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLF6G38-10,112 pin diagram and circuit diagram and usage method of function,BLF6G38-10,112 electronics tutorials.You can download from the Anli.