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BLF6G38-10,112 Технические параметры

NXP Semiconductors  BLF6G38-10,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Typical Drain Efficiency (%) 20
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Supplier Package CDFM
Military No
Mounting Surface Mount
Package Height 3.63(Max)
Package Length 6.93(Max)
Package Width 6.93(Max)
PCB changed 3
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Свойство продукта Значение свойства
Maximum Gate Source Voltage (V) 13
Maximum VSWR 10
Maximum Continuous Drain Current (A) 3.1
Maximum Drain Source Resistance (mOhm) [email protected]
Typical Reverse Transfer Capacitance @ Vds (pF) 3.6@28V
Typical Forward Transconductance (S) 0.8(Min)
Output Power (W) 2(Typ)
Typical Power Gain (dB) 14
Maximum Frequency (MHz) 3600
Minimum Frequency (MHz) 3400
Packaging Bulk
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation 1-Carrier N-CDMA
RoHS Status RoHS Compliant
Просмотр сходства

BLF6G38-10,112 Документы

BLF6G38-10,112 brand manufacturers: NXP Semiconductors, Anli stock, BLF6G38-10,112 reference price.NXP Semiconductors. BLF6G38-10,112 parameters, BLF6G38-10,112 Datasheet PDF and pin diagram description download.You can use the BLF6G38-10,112 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLF6G38-10,112 pin diagram and circuit diagram and usage method of function,BLF6G38-10,112 electronics tutorials.You can download from the Anli.