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BLL1214-250,112 Технические параметры

NXP Semiconductors  BLL1214-250,112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Mount Screw
Number of Pins 3Pins
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 75
Maximum Gate Source Voltage (V) ±22
Maximum VSWR 3
Maximum Drain Source Resistance (mOhm) 60(Typ)@9V
Typical Forward Transconductance (S) 9
Maximum Power Dissipation (mW) 400000
Output Power (W) 250
Typical Power Gain (dB) 12(Min)
Maximum Frequency (MHz) 1400
Minimum Frequency (MHz) 1200
Typical Drain Efficiency (%) 42(Min)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
Automotive Unknown
Supplier Package SOT-502A
Military No
Mounting Screw
Package Height 4.72(Max)
Package Length 34.16(Max)
Package Width 9.91(Max)
PCB changed 3
Voltage, Rating 75 V
Свойство продукта Значение свойства
Number of Elements 1 Element
RoHS Compliant
Packaging Bulk
Part Status Obsolete
Max Operating Temperature 200 °C
Min Operating Temperature -65 °C
Max Power Dissipation 400 W
Current Rating 45 A
Frequency 1.4 GHz
Pin Count 3
Configuration Single
Element Configuration Single
Power Dissipation 400 W
Output Power 250 W
Test Current 150 mA
Drain to Source Voltage (Vdss) 75 V
Continuous Drain Current (ID) 45 A
Gate to Source Voltage (Vgs) 22 V
Gain 12 dB
Max Frequency 1.4 GHz
Max Output Power 250 W
Drain to Source Breakdown Voltage 75 V
Channel Type N
Drain to Source Resistance 60 mΩ
Mode of Operation Pulsed RF Class-AB
Test Voltage 36 V
Width 9.91 mm
Height 4.72 mm
Length 34.16 mm
RoHS Status Supplier Unconfirmed

BLL1214-250,112 Документы

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