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BLL6H0514-25 Технические параметры
NXP Semiconductors BLL6H0514-25 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| ECCN (US) | EAR99 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Process Technology | LDMOS | |
| Maximum Drain Source Voltage (V) | 100 | |
| Maximum Gate Source Voltage (V) | 13 | |
| Maximum Gate Threshold Voltage (V) | 2.4 | |
| Maximum VSWR | 10 | |
| Maximum Continuous Drain Current (A) | 2.5 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum IDSS (uA) | 1 | |
| Maximum Drain Source Resistance (mOhm) | [email protected] | |
| Typical Forward Transconductance (S) | 0.15 | |
| Output Power (W) | 25(Min) | |
| Typical Power Gain (dB) | 21 | |
| Maximum Frequency (MHz) | 1400 | |
| Minimum Frequency (MHz) | 500 | |
| PCB changed | 3 | |
| Package Width | 5.97(Max) | |
| Package Length | 20.45(Max) | |
| Package Height | 4.67(Max) | |
| Mounting | Screw | |
| Military | No | |
| Supplier Package | LDMOST | |
| Maximum Operating Temperature (°C) | 200 | |
| Minimum Operating Temperature (°C) | -65 | |
| Typical Drain Efficiency (%) | 59 | |
| Typical Rise Time (ns) | 20 | |
| Typical Fall Time (ns) | 6 | |
| RoHS | Compliant | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
| Package Style | FLANGE MOUNT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BLL6H0514-25 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.69 | |
| Drain Current-Max (ID) | 2.5 A | |
| Part Status | NRND | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 200 °C | |
| Max Power Dissipation | 25 W | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 2.5 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| Mode of Operation | Pulsed RF | |
| RoHS Status | RoHS Compliant | |
| REACH SVHC | No SVHC |
BLL6H0514-25 Документы
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