ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

BLP7G22-05 Технические параметры

NXP Semiconductors  BLP7G22-05 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.3
Maximum VSWR 10
Maximum Gate Source Leakage Current (nA) 140
Maximum IDSS (uA) 1.4
Maximum Drain Source Resistance (mOhm) 1800(Typ)@6.05V
Typical Forward Transconductance (S) 0.08
Output Power (W) 5.5(Min)
Typical Power Gain (dB) 16
Maximum Frequency (MHz) 2700
Свойство продукта Значение свойства
Minimum Frequency (MHz) 700
Typical Drain Efficiency (%) 23
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Package HVSON EP
Military No
Mounting Surface Mount
Package Height 0.82
Package Length 6
Package Width 4
PCB changed 12
Part Status Active
Pin Count 12
Configuration Single Dual Gate
Channel Type N
Mode of Operation Pulsed CW
RoHS Status RoHS Compliant

BLP7G22-05 Документы

BLP7G22-05 brand manufacturers: NXP Semiconductors, Anli stock, BLP7G22-05 reference price.NXP Semiconductors. BLP7G22-05 parameters, BLP7G22-05 Datasheet PDF and pin diagram description download.You can use the BLP7G22-05 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLP7G22-05 pin diagram and circuit diagram and usage method of function,BLP7G22-05 electronics tutorials.You can download from the Anli.