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BLS6G2731-6 Технические параметры

NXP Semiconductors  BLS6G2731-6 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 60
Maximum Gate Source Voltage (V) 13
Maximum VSWR 5
Maximum Continuous Drain Current (A) 3.5
Maximum Drain Source Resistance (mOhm) [email protected]
Typical Forward Transconductance (S) 0.81(Min)
Output Power (W) 6
Typical Power Gain (dB) 15
Maximum Frequency (MHz) 3100
Minimum Frequency (MHz) 2700
Свойство продукта Значение свойства
Typical Drain Efficiency (%) 33
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 200
AEC Qualified Unknown
Supplier Package CDFM
Mounting Surface Mount
Package Height 3.63(Max)
Package Length 6.93(Max)
Package Width 6.93(Max)
PCB changed 3
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type N
Mode of Operation Pulsed RF
RoHS Status RoHS Compliant
Просмотр сходства

BLS6G2731-6 Документы

BLS6G2731-6 brand manufacturers: NXP Semiconductors, Anli stock, BLS6G2731-6 reference price.NXP Semiconductors. BLS6G2731-6 parameters, BLS6G2731-6 Datasheet PDF and pin diagram description download.You can use the BLS6G2731-6 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BLS6G2731-6 pin diagram and circuit diagram and usage method of function,BLS6G2731-6 electronics tutorials.You can download from the Anli.