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BLS6G2731S-130 Технические параметры
NXP Semiconductors BLS6G2731S-130 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| ECCN (US) | EAR99 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Process Technology | LDMOS | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Gate Source Voltage (V) | 13 | |
| Maximum VSWR | 5 | |
| Maximum Continuous Drain Current (A) | 33 | |
| Maximum Drain Source Resistance (mOhm) | [email protected] | |
| Typical Forward Transconductance (S) | 13 | |
| Output Power (W) | 130(Typ) | |
| Typical Power Gain (dB) | 12 | |
| Maximum Frequency (MHz) | 3100 | |
| Minimum Frequency (MHz) | 2700 | |
| Typical Fall Time (ns) | 6 | |
| Typical Rise Time (ns) | 20 | |
| Typical Drain Efficiency (%) | 47 | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 200 | |
| Supplier Package | CDFM | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 4.22(Max) | |
| Package Length | 17.75(Max) | |
| Package Width | 9.53(Max) | |
| PCB changed | 3 | |
| Package Description | FLATPACK, R-CDFP-F2 | |
| Package Style | FLATPACK |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BLS6G2731S-130 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.63 | |
| Drain Current-Max (ID) | 33 A | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 280 | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-CDFP-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 60 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| Mode of Operation | Pulsed RF | |
| RoHS Status | RoHS Compliant |
BLS6G2731S-130 Документы
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