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BSH205G2R Технические параметры
NXP Semiconductors BSH205G2R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Transport packaging size/quantity | 44*33*24/50 | |
| Glue | high-adhesion glue | |
| Tape length | 33 m | |
| Type of integrated circuit | interface | |
| Kind of integrated circuit | digital isolator | |
| Data transfer rate | 150Mbps | |
| Mounting | SMD | |
| Case | SOP8 | |
| Insulation voltage | 3.75kV | |
| Kind of channel | unidirectional | |
| Gross weight | 1 g | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-236 | |
| Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Manufacturer Package Code | SOT23 | |
| Drain Current-Max (ID) | 2 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Style | SMALL OUTLINE | |
| Operating temperature | -40...125°C | |
| ECCN Code | EAR99 | |
| Type | Polyimide tape single-sided | |
| Color | yellow metallic | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of channels | 2channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Number of inputs | 1/1input | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | TO-236AB | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Features | dismantling at a temperature of 260 - 300 °C without a trace | |
| Width | 50 mm | |
| Thickness | 0.05 mm |
BSH205G2R Документы
- Datasheets69d9fd1ddc4f4d42565d27efeecdc073.pdf
Индекс :
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