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BT151S-800R,118 Технические параметры

NXP Semiconductors  BT151S-800R,118 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Thyristors - SCRs
Марка
Factory Lead Time 6 Weeks
ECCN (US) EAR99
Maximum Rate of Rise of Off-State Voltage (V/us) 1000(Typ)
Maximum Rate of Rise of On-State Current (A/us) 50
Maximum Gate Trigger Voltage (V) 1.5
Maximum Gate Trigger Current (mA) 15
Surge Current Rating (A) 132
Maximum Holding Current (mA) 20
Repetitive Peak Reverse Voltage (V) 800
Maximum Gate Peak Inverse Voltage (V) 5
Peak On-State Voltage (V) 1.75@23A
Repetitive Peak Forward Blocking Voltage (V) 800
Rated Average On-State Current (A) 7.5
RMS On-State Current (A) 12
Repetitive Peak Off-State Current (mA) 0.5
Phase Control No
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Automotive Unknown
Supplier Package DPAK
Mounting Surface Mount
Свойство продукта Значение свойства
Package Height 2.38(Max)
Package Length 6.73(Max)
Package Width 6.22(Max)
PCB changed 2
Tab Tab
Package Description ,
Moisture Sensitivity Levels 1
Rohs Code Yes
Manufacturer Part Number BT151S-800R,118
Manufacturer WeEn Semiconductor Co Ltd
Part Life Cycle Code Active
Samacsys Description THYRISTOR 800V 12A DPAK
Ihs Manufacturer WEEN SEMICONDUCTORS CO LTD
Risk Rank 0.57
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Terminal Finish Tin (Sn)
Reach Compliance Code not_compliant
Pin Count 3
Trigger Device Type SCR
RoHS Status Yes with exemptions

BT151S-800R,118 Документы

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