Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
NXP Semiconductors BUK98150-55A/CUF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Color button/ housing | white/ black | |
| Gross weight | 5.35 | |
| Transport packaging size/quantity | 48*31.5*27/2000 | |
| Switching scheme | OFF-ON (2P) | |
| Number of switching cycles (electrical) | ≥10000 | |
| Dielectric strength | 1500 V | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SC-73 | |
| Package Description | SC-73, 4 PIN | |
| Manufacturer Package Code | SOT223 | |
| Drain Current-Max (ID) | 5.5 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Type | PBS101 series pushbutton switch, V-type terminals | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.29.00.75 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 4 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-G4 | |
| Contact resistance | ≤50 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -25…+85 °C | |
| Rated current | 4/ 2 | |
| Drain-source On Resistance-Max | 0.161 Ω | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| DS Breakdown Voltage-Min | 55 V | |
| Avalanche Energy Rating (Eas) | 22 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Rated voltage | 125/ 250 (AC) | |
| Saturation Current | 1 | |
| Height | 13.6 | |
| Width | 23.5 | |
| Diameter | button - 5.8 |