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PDTA114TK Технические параметры
NXP Semiconductors PDTA114TK technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT-23 | |
| Package Description | PLASTIC, TO-236, SC-59A, 3 PIN | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | BUILT IN BIAS RESISTOR | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| JEDEC-95 Code | TO-236AB | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 200 | |
| Collector-Emitter Voltage-Max | 50 V |
PDTA114TK Документы
- DatasheetsPHGLS14726-1.pdf
Индекс :
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