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PDTC124ET Технические параметры

NXP Semiconductors  PDTC124ET technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description PLASTIC PACKAGE-3
Moisture Sensitivity Levels 1
Number of Elements 1 Element
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Transition Frequency-Nom (fT) 100 MHz
JESD-609 Code e3
Pbfree Code Yes
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
JEDEC-95 Code TO-236AB
Power Dissipation-Max (Abs) 0.25 W
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 60
Collector-Emitter Voltage-Max 50 V
VCEsat-Max 0.3 V
Collector-Base Capacitance-Max 3.5 pF

PDTC124ET Документы

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