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PESD3V3S1UL Технические параметры
NXP Semiconductors PESD3V3S1UL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Zener - Single | |
| Марка | ||
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | DFN | |
| Package Description | R-PBCC-N2 | |
| Breakdown Voltage-Nom | 5.6 V | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW LEAKAGE CURRENT | |
| HTS Code | 8541.10.00.50 | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 2 | |
| JESD-30 Code | R-PBCC-N2 | |
| Qualification Status | Not Qualified | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Rep Pk Reverse Voltage-Max | 3.3 V | |
| Non-rep Peak Rev Power Dis-Max | 150 W | |
| Breakdown Voltage-Min | 5.2 V | |
| Breakdown Voltage-Max | 6 V |
PESD3V3S1UL Документы
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