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PMBFJ110 Технические параметры

NXP Semiconductors  PMBFJ110 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Date Of Intro 1991-01-25
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Type of diode TVS array
Max. forward impulse current 17A
Semiconductor structure unidirectional
Mounting SMD
Case SOD323
Max. off-state voltage 8V
Features of semiconductor devices ESD protection
Kind of package reel,
Color key/ housing black/ black
Number of contacts in group/ number of groups (total contacts) 3 (2+1 backlight) / 1 (3P)
Light type neon point, 250 V
JESD-609 Code e3
Свойство продукта Значение свойства
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN
HTS Code 8541.21.00
Capacitance 5pF
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Depth 37 mm
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode DEPLETION MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 18 Ω
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.25 W
Thermistor Application 8.5V
Feedback Cap-Max (Crss) 15 pF
Saturation Current 1
Height 31.8 (on the faceplate) mm
Width 13.7 mm

PMBFJ110 Документы

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