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PMEG6020ETP,115 Технические параметры

NXP Semiconductors  PMEG6020ETP,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case SOD-128
Supplier Device Package SOD-128/CFP5
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 60
Maximum Continuous Forward Current (A) 2.8
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 0.53@2A
Peak Reverse Current (uA) 150
Maximum Power Dissipation (mW) 2500
Peak Reverse Recovery Time (ns) 8.6(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Automotive
Automotive Yes
AEC Qualified Number AEC-Q101
Supplier Package SOD-128
Military No
Mounting Surface Mount
Package Length 4(Max)
Свойство продукта Значение свойства
Package Width 2.7(Max)
PCB changed 2
Package Bulk
Base Product Number PMEG6020
Mfr NXP USA Inc.
Product Status Active
Packaging Tape and Reel
Series -
Part Status Active
Type Schottky Diode
Pin Count 2
Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If 530 mV @ 2 A
Operating Temperature - Junction 175°C (Max)
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified (Io) 2A
Capacitance @ Vr, F 240pF @ 1V, 1MHz
Reverse Recovery Time (trr) 8.6 ns
RoHS Status Yes with exemptions
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