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PMEG6030ELP Технические параметры

NXP Semiconductors  PMEG6030ELP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Bridge Rectifiers
Марка
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Forward Voltage-Max (VF) 0.67 V
Number of Elements 1 Element
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation (Max) 0.75 W
Свойство продукта Значение свойства
ECCN Code EAR99
Applications EFFICIENCY
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code R-PDSO-F2
Configuration SINGLE
Diode Type RECTIFIER DIODE
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 60 V
Non-rep Pk Forward Current-Max 70 A
Reverse Current-Max 1 μA
Reverse Recovery Time-Max 0.012 μs

PMEG6030ELP Документы

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