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PNS40010ER,115 Технические параметры

NXP Semiconductors  PNS40010ER,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Mounting Type Surface Mount
Package / Case SOD-123W
Supplier Device Package SOD-123W
PCB changed 2
Package Width 1.9(Max)
Package Length 2.8(Max)
Mounting Surface Mount
Military No
Supplier Package SOD-123W
AEC Qualified Number AEC-Q101
Supplier Temperature Grade Automotive
Maximum Operating Temperature (°C) 175
Minimum Operating Temperature (°C) -55
Peak Reverse Recovery Time (ns) 1800
Maximum Power Dissipation (mW) 2300
Peak Reverse Current (uA) 1
Peak Forward Voltage (V) 1.1@1A
Peak Non-Repetitive Surge Current (A) 32
Maximum Continuous Forward Current (A) 1.4
Peak Reverse Repetitive Voltage (V) 400
Свойство продукта Значение свойства
Maximum DC Reverse Voltage (V) 400
HTS 8541.10.00.80
ECCN (US) EAR99
Package Bulk
Mfr NXP Semiconductors
Product Status Active
Packaging Tape and Reel
Series -
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Operating Temperature - Junction 175°C (Max)
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F 20pF @ 4V, 1MHz
Reverse Recovery Time (trr) 1.8 µs
RoHS Status Yes with exemptions
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PNS40010ER,115 Документы

PNS40010ER,115 brand manufacturers: NXP Semiconductors, Anli stock, PNS40010ER,115 reference price.NXP Semiconductors. PNS40010ER,115 parameters, PNS40010ER,115 Datasheet PDF and pin diagram description download.You can use the PNS40010ER,115 Diodes - RF, DSP Datesheet PDF, find PNS40010ER,115 pin diagram and circuit diagram and usage method of function,PNS40010ER,115 electronics tutorials.You can download from the Anli.