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PTVS26VS1UR Технические параметры

NXP Semiconductors  PTVS26VS1UR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mount Surface Mount
Number of Pins 2Pins
Breakdown Voltage / V 28.9 V
Reverse Stand-off Voltage 26 V
Packaging Cut Tape
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Polarity Unidirectional
Element Configuration Single
Max Reverse Leakage Current 100 nA
Clamping Voltage 42.1 V
Свойство продукта Значение свойства
Peak Pulse Current 9.5 A
Peak Pulse Power 400 W
Direction Unidirectional
Test Current 1 mA
Max Breakdown Voltage 31.9 V
ESD Protection Yes
Min Breakdown Voltage 28.9 V
Height 1.1 mm
Length 2.8 mm
Width 1.9 mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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PTVS26VS1UR Документы

PTVS26VS1UR brand manufacturers: NXP Semiconductors, Anli stock, PTVS26VS1UR reference price.NXP Semiconductors. PTVS26VS1UR parameters, PTVS26VS1UR Datasheet PDF and pin diagram description download.You can use the PTVS26VS1UR TVS - Diodes, DSP Datesheet PDF, find PTVS26VS1UR pin diagram and circuit diagram and usage method of function,PTVS26VS1UR electronics tutorials.You can download from the Anli.